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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -45* i d @ v gs = -12v, t c = 100c continuous drain current -45* i dm pulsed drain current ? -180 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 990 mj i ar avalanche current ? -45 a e ar repetitive avalanche energy ? 20.8 mj dv/dt p eak diode recovery dv/dt ? -2.7 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in./1.6 mm from case for 10s) weight 9.3 ( typical ) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHMS597064 power mosfet thru-hole (low-ohmic to-254aa) 07/21/03 www.irf.com 1 60v, p-channel technology product summary part number radiation level r ds(on) i d IRHMS597064 100k rads (si) 0.016 ? -45a* irhms593064 300k rads (si) 0.016 ? -45a* for footnotes refer to the last page * current is limited by package to-254aa low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight pd - 94713
IRHMS597064 pre-irradiation 2 www.irf.com note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -45* i sm pulse source current (body diode) ? ? ? -180 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -45a, v gs = 0v ? t rr reverse recovery time ? ? 110 ns t j = 25c, i f =-45a, di/dt -100a/ s q rr reverse recovery charge ? ? 460 nc v dd -25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by package thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.60 r thcs case-to-sink ? 0.21 ? c/w r thja junction-to-ambient ? ? 48 typical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -60 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.064 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.016 ? v gs = -12v, i d = -45a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 40 ? ? s ( ) v ds = -25v, i ds = -45a ? i dss zero gate voltage drain current ? ? -10 v ds = -48v ,v gs = 0v ? ? -25 v ds = -48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 160 v gs =-12v, i d = -45a q gs gate-to-source charge ? ? 60 nc v ds = -30v q gd gate-to-drain (?miller?) charge ? ? 65 t d (on) turn-on delay time ? ? 35 v dd = -30v, i d = -45a t r rise time ? ? 150 v gs =-12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 100 t f fall time ? ? 35 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 8040 ? v gs = 0v, v ds = -25v c oss output capacitance ? 2780 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 310 ? r g internal gate resistance ? 2.2 ? ? f = 0.75mhz, open drain na ? ? nh ns a
www.irf.com 3 pre-irradiation IRHMS597064 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -60 ? -60 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs =-20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -10 ? -10 a v ds = -48v, v gs =0v r ds(on) static drain-to-source ? ? 0.015 ? 0.015 ? v gs = -12v, i d =-45a on-state resistance (to-3) r ds(on) static drain-to-source on-state ? ? 0.016 ? 0.016 ? v gs = -12v, i d =-45a resistance (low-ohmic to-254) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHMS597064 2. part number irhms593064 fig a. single event effect, safe operating area v sd diode forward voltage ? ? -5.0 ? -5.0 v v gs = 0v, i s = -45a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.3 285 36.8 - 60 - 60 - 60 - 60 - 60 i 59.9 345 32.7 - 60 - 60 - 60 - 45 - 25 au 82.3 357 28.5 - 60 - 60 - 60 ? ? -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 vgs vds br i au
IRHMS597064 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -45a

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www.irf.com 5 pre-irradiation IRHMS597064 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 -v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss

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IRHMS597064 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) fig 10a. switching time test circuit v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) -i , drain current (a) c d limited by package
www.irf.com 7 pre-irradiation IRHMS597064 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -12 v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v 25 50 75 100 125 150 0 500 1000 1500 2000 2500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -20a -28.5a -45a fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as v gs v dd + -
IRHMS597064 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = - 25v, starting t j = 25c, l= 1.0mh peak i l = - 45a, v gs = -12v ? i sd - 45a, di/dt - 280a/ s, v dd - 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/03 case outline and dimensions ?low-ohmic to-254aa beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. caution not e s : 1. dime ns ioning & t ole rancing pe r as me y14.5m-1994. 2. all dimensions are shown in millimeters [inches]. 1 = drain 2 = s ource 3 = gat e pin as s ignme nt s 3. cont rol l ing dime ns ion: inch . 4. conforms to jedec outline to-254aa. 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] b a 3x b 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] 123 17.40 [.685] 16.89 [.665] 3.81 [.150] 0.84 [.033] max. c 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] b a 3x 4.06 [.160] 3.56 [.140] b r 1.52 [.060] 123 4.82 [.190] 3.81 [.150] 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139]

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